27th Workshop on Electron Device Interface Technology (EDIT-27)

On January 28, imec will report their research outcome via an invited talk at the 27^th Workshop on Electron Device Interface Technology (EDIT-27).

The impact of the thermal budget during the post-epi anneal of Ge epitaxially grown on Si will be re-addressed. It will be discussed how the post-Ge epi annealing step affects the Ge material quality and, as a result, the excess carrier lifetime. Next, the excess carrier lifetimes will be compared for Ge on Si with those obtained for Ge-on-Nothing.